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K2570 PDF
K2570 数据手册 ( 数据表 ) - Hitachi -> Renesas Electronics
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Hitachi -> Renesas Electronics
Features
• Low on-resistance
RDS(on) = 0. 8Ω typ. (VGS = 4 V, ID = 100 mA)
• 2.5V gate drive devices.
• Small package (MPAK)
Silicon N Channel MOS FET Low Frequency Power Switching ( Rev : 2014 )
Renesas Electronics
Silicon N Channel MOS FET Low Frequency Power Switching
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET Low Frequency Power Switching
Renesas Electronics
Silicon N Channel MOS FET Low Frequency Power Switching
Renesas Electronics
Silicon N Channel MOS FET Low Frequency Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
Renesas Electronics
Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
Renesas Electronics
Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
Renesas Electronics
Silicon N Channel MOS FET Power Switching
Renesas Electronics
Silicon N Channel MOS FET Power Switching ( Rev : 2006 )
Renesas Electronics
