K2313(2013) 数据手册 ( 数据表 ) - Toshiba
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Toshiba
Chopper Regulator, DC−DC Converter and Motor Drive Applications
● 4-V gate drive
● Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.)
● High forward transfer admittance : |Yfs| = 60 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)
● Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2010 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Toshiba