JZDW9016 数据手册 ( 数据表 ) - JIEJIE MICROELECTRONICS CO.,Ltd
生产厂家

JIEJIE MICROELECTRONICS CO.,Ltd
Chip Features
(1) SIPOS and GPP double-layer passivation protection process
(2) Single mesa outer trench process
(3) VRRM≥ 1600V
(4) Front metal layer: AL or Ti-Ni-Ag
(5) Backside metal layer: Ti-Ni-Ag
The main purpose
(1) Rectified power supply
(2) Other rectification applications
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd