J557A 数据手册 ( 数据表 ) - Renesas Electronics
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Renesas Electronics
DESCRIPTION
The 2SJ557A is a switching device which can be driven directly by a 4 V power source.
The 2SJ557A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
• 4 V drive available
• Low on-state resistance
RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −1.0 A)
RDS(on)2 = 134 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A)
RDS(on)3 = 166 mΩ MAX. (VGS = −4.0 V, ID = −1.0 A)
• Built-in gate protection diode
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology