J105(1997) 数据手册 ( 数据表 ) - Toshiba
生产厂家
Toshiba
FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT
AND IMPEDANCE CONVERTER APPLICATIONS
• High breakdown voltage: VGDS = 50 V
• High input impedance: IGSS = 1.0 nA (Max) (VGS = 30 V)
• Low RDS (ON): RDS (ON) = 270 Ω (Typ.) (IDSS = −5 mA)
• Complimentary to 2SK330
• Small package
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
