Overview
   The IS66WVD1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst mode for increased read and write bandwidth. 

FEATUREs
● Single device supports asynchronous and burst
   operation
● Mixed Mode supports asynchronous write and
   synchronous read operation
● Dual voltage rails for optional performance
   • VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
● Multiplexed address and data bus
   • ADQ0~ADQ15
● Asynchronous mode read access : 70ns
● Burst mode for Read and Write operation
   • 4, 8, 16 or Continuous
● Low Power Consumption
   • Asynchronous Operation < 25 mA
   • Burst operation < 45 mA (@133Mhz)
   • Standby < 80 uA(max.)
   • Deep power-down (DPD) < 3uA (Typ)
● Low Power Feature
   • Reduced Array Refresh
   • Temperature Controlled Refresh
● Operation Frequency up to 133MHz
● Operating temperature Range
   Industrial -40°C~85°C
● Package: 54-ball VFBGA