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IS42S32400D 数据手册 ( 数据表 ) - Integrated Silicon Solution

IS42S32400D image

零件编号
IS42S32400D

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page
60 Pages

File Size
484.2 kB

生产厂家
ISSI
Integrated Silicon Solution 

OVERVIEW
ISSI's 128Mb Synchronous DRAM  achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks.


FEATURES
• Clock frequency: 166, 143, 125, 100 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
                       VDD    VDDQ
     IS42S32400D 3.3V  3.3V
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh with programmable refresh periods
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CASlatency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Available in Industrial Temperature
• Available in 86-pin TSOP-II and 90-ball FBGA
• Available in Lead-free

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零件编号
产品描述 (功能)
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生产厂家
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