IRFM360(2002) 数据手册 ( 数据表 ) - International Rectifier
生产厂家

International Rectifier
HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
FEATUREs:
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Electrically Isolated
■ Dynamic dv/dt Rating
■ Light-weight
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POWER MOSFET THRU-HOLE (TO-254AA)
International Rectifier
POWER MOSFET THRU-HOLE (TO-254AA)
International Rectifier
POWER MOSFET THRU-HOLE (TO-254AA)
New Jersey Semiconductor
POWER MOSFET THRU-HOLE (TO-254AA)
International Rectifier
POWER MOSFET THRU-HOLE (TO-254AA)
International Rectifier
POWER MOSFET THRU-HOLE (TO-254AA) ( Rev : 2007 )
International Rectifier
POWER MOSFET THRU-HOLE (TO-254AA)
International Rectifier
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
International Rectifier
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) ( Rev : 2001 )
International Rectifier
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
International Rectifier