IRFBC30 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
DESCRIPTION
The PowerMESH™ ΙΙ is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
■ TYPICAL RDS(on) = 1.8 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
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N - CHANNEL 600V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET
STMicroelectronics
N-channel TO-220 MOSFET
Xian Semipower Electronic Technology Co., Ltd.
N - CHANNEL 600V - 0.7Ω- 9A TO-220/TO220FP PowerMESHMOSFET
STMicroelectronics
N-CHANNEL 3A - 600V TO-220 PowerMESH IGBT
STMicroelectronics
N-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP PowerMeshII MOSFET
STMicroelectronics
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
NXP Semiconductors.
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 ( Rev : 2010_02 )
NXP Semiconductors.
N-CHANNEL 12A - 600V TO-220 PowerMESH™ IGBT
STMicroelectronics
N-CHANNEL 20A - 600V - TO-220 PowerMesh™ IGBT
STMicroelectronics
75V N-Channel MOSFET TO-220
Fairchild Semiconductor