IRFB18N50KPBF 数据手册 ( 数据表 ) - Kersemi Electronic Co., Ltd.
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Kersemi Electronic Co., Ltd.
1. Low Gate Charge QgResults in Simple Drive Requirement
2. Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
3. Fully Characterized Capacitance and Avalanche Voltage and Current
4. Low RDS(on)
5. Lead (Pb)-free Available

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Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
Vishay Semiconductors
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
Vishay Semiconductors
SMPS MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A)
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
International Rectifier
HEXFET® Power MOSFET VDSS=500V Rds(on) max=0.24Ω ID=20A
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
International Rectifier
HEXFET Power MOSFET VDSS=500V, RDS(on)typ.=0.135Ω, ID=32A
International Rectifier