IRFB13N50A 数据手册 ( 数据表 ) - International Rectifier
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International Rectifier
SMPS MOSFET
Benefits
● Low Gate Charge Qg results in Simple Drive Requirement
● Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
● Fully Characterized Capacitance and Avalanche Voltage
and Current
APPLICATIONs
● Switch Mode Power Supply (SMPS)
● Uninterruptible Power Supply
● High Speed Power Switching
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HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.1 A
International Rectifier
HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
International Rectifier
HEXFET Power MOSFET VDSS=500V, RDS(on)typ.=0.135Ω, ID=32A
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A
International Rectifier
HEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 3.1A
International Rectifier
HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A
International Rectifier