DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

FEATURES
• Advanced Process Technology
• Surface Mount (IRF9Z24S/SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L/SiHF9Z24L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available