IRF9Z24 数据手册 ( 数据表 ) - International Rectifier
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International Rectifier
Description
Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A
International Rectifier
Power MOSFET(Vdss=60V/ Rds(on)=0.042ohm/ Id=21A)
International Rectifier
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
Vishay Semiconductors
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
International Rectifier
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Vishay Semiconductors
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
International Rectifier
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Vishay Semiconductors
HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
International Rectifier