IRF630MFP 数据手册 ( 数据表 ) - VBsemi Electronics Co.,Ltd
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VBsemi Electronics Co.,Ltd
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• 175 °C Operating Temperature
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
Unspecified
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd