IRF620 数据手册 ( 数据表 ) - STMicroelectronics
生产厂家
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
■ TYPICAL RDS(on) = 0.55 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIAL ACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT
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N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Comset Semiconductors
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Comset Semiconductors
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
