IPD122N10N3G(2009) 数据手册 ( 数据表 ) - Infineon Technologies
生产厂家

Infineon Technologies
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Page Link's:
1
2
3
4
5
6
7
8
9
TO-3 POWER TRANSISTOR SOCKET
Unspecified
OptiMOS™3 Power-Transistor ( Rev : 2009 )
Infineon Technologies
OptiMOS™3 Power-Transistor ( Rev : 2013 )
Infineon Technologies
OptiMOS™3 Power-Transistor
Infineon Technologies
OptiMOS™3 Power-Transistor ( Rev : 2010 )
Infineon Technologies
OptiMOS™3 Power-Transistor
Infineon Technologies
OptiMOS™3 Power-Transistor
Infineon Technologies
OptiMOS™3 Power-Transistor
Infineon Technologies
OptiMOS™3 Power-Transistor
Infineon Technologies
OptiMOS™3 Power-Transistor
Infineon Technologies