IKW40N65WR5 数据手册 ( 数据表 ) - Infineon Technologies
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Infineon Technologies
Features
• VCE = 650 V
• IC = 40 A
• Powerful monolithic diode optimized for ZCS applications
• High ruggedness, temperature stable behavior
• Very low VCEsat and low Eoff
• Easy paralleling capability due to positive temperature coefficient in VCEsat
• Low EMI
• Low electrical parameters depending (dependence) on temperature
• Qualified according to JESD-022 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models: //www.infineon.com/igbt/
Potential applications
• Welding
• PFC
• ZCS - converters
Reverse-Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse-Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2013 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies