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IDW30G120C5B 数据手册 ( 数据表 ) - Infineon Technologies

IDW30G120C5B image

零件编号
IDW30G120C5B

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page
10 Pages

File Size
564.7 kB

生产厂家
Infineon
Infineon Technologies 

Features:
• Revolutionary semiconductor material - Silicon Carbide
• No reverse recovery current / No forward recovery
• Temperature independent switching behavior
• Low forward voltage even at high operating temperature
• Tight forward voltage distribution
• Excellent thermal performance
• Extended surge current capability
• Specified dv/dt ruggedness
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant


Benefits
• System efficiency improvement over Si diodes
• Enabling higher frequency / increased power density solutions
• System size/cost savings due to reduced heatsink requirements and smaller magnetics
• Reduced EMI
• Highest efficiency across the entire load range
• Robust diode operation during surge events
• High reliability
• RelatedLinks: www.infineon.com/sic


APPLICATIONs
• Solar inverters
• Uninterruptable power supplies
• Motor drives
• Power Factor Correction


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