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IDT08S60C(2006) 数据手册 ( 数据表 ) - Infineon Technologies

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零件编号
IDT08S60C

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7 Pages

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227.5 kB

生产厂家
Infineon
Infineon Technologies 

Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)

thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives


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生产厂家
2nd generation thinQ!™ SiC Schottky Diode
PDF
Infineon Technologies
2nd generation thinQ!™ SiC Schottky Diode
PDF
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2006 )
PDF
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2006 )
PDF
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
PDF
Infineon Technologies
2nd Generation thinQ!® SiC Schottky Diode
PDF
Infineon Technologies
2nd generation thinQ!™ SiC Schottky Diode
PDF
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
PDF
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2009 )
PDF
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
PDF
Infineon Technologies

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