The HYM 368035S/GS-60 is a 32 MByte EDO-DRAM module organized as 8 388 608 words by 36-Bit in two banks assembled on a 72-pin single-in-line package comprising 24 HYB 5117305BJ 4M × 3 DRAMs in 300 mil wide SOJ-packages mounted together with 24 0.2 µF ceramic decoupling capacitors on a PC board.

Advanced Information
• 8 388 608 words by 36-Bit organization in 2 banks
• Fast access and cycle time
    60 ns RAS access time
    15 ns CAS access time
    104 ns cycle time
• Hyper page mode (EDO) capability 25 ns cycle time
• Single + 5 V (± 10 %) supply
• Low power dissipation max. 7260 mW active
    CMOS – 132 mW standby
    TTL – 264 mW standby
• CAS-before-RAS refresh
    RAS-only-refresh
    Hidden-refresh
• 24 decoupling capacitors mounted on substrate
• All inputs, outputs and clocks fully TTL compatible
• 72 pin Single in-Line Memory Module (L-SIM-72-17) with 31.75 mm (1250 mil) height
• Utilizes 24 4M x 3 DRAM’s in 300 mil SOJ packages
• 2048 refresh cycles / 32 ms
• Optimized for use in byte-write parity applications
• Tin-Lead contact pads (HYM 368035S-60)
• Gold contact pads (HYM 368035GS-60)