Advanced Information
• 1 048 576 words by 16-bit organization
• 0 to 70 °C operating temperature
• Performance:
• Single + 5 V (± 10 %) supply
• Low power dissipation
    max. 1100 active mW ( HYB5118165BSJ-50)
    max. 990 active mW ( HYB5118165BSJ-60)
    max. 880 active mW ( HYB5118165BSJ-70)
    max. 550 active mW ( HYB5116165BSJ-50)
    max. 495 active mW ( HYB5116165BSJ-60)
    max. 440 active mW ( HYB5116165BSJ-70)
    11 mW standby (TTL)
    5.5. mW standby (MOS)
• Output unlatched at cycle end allows two-dimensional chip selection • Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and Self Refresh
• Hyper page mode (EDO) capability
• All inputs, outputs and clocks fully TTL-compatible
• 1024 refresh cycles / 16 ms for HYB5118165BSJ (1k-Refresh)
• 4096 refresh cycles / 64 ms for HYB5116165BSJ (4k-Refresh)
• Plastic Package: P-SOJ-42-1 400 mil