GENERAL DESCRIPTION
The HY29LV160 is a 16 Mbit, 3 volt-only, CMOS Flash memory organized as 2,097,152 (2M) bytes or 1,048,576 (1M) words that is available in 48-pin TSOP and 48-ball FBGA packages. Wordwide data (x16) appears on DQ[15:0] and byte-wide (x8) data appears on DQ[7:0].

The HY29LV160 can be programmed and erased in-system with a single 3 volt VCC supply. Internally generated and regulated voltages are provided for program and erase operations, so that the device does not require a higher voltage VPP power supply to perform those functions. The device can also be programmed in standard EPROM programmers. Access times as low as 80 ns over the full operating voltage range of 2.7 - 3.6 volts, and 70 ns with a limited voltage range of 3.0 - 3.6 volts, are offered for timing compatibility with the zero wait state requirements of high speed microprocessors. To eliminate bus contention, the HY29LV160 has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.