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HY27UF081G2M-TES 数据手册 ( 数据表 ) - Hynix Semiconductor

HY27L08F1G2M-FCB image

零件编号
HY27UF081G2M-TES

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48 Pages

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生产厂家
Hynix
Hynix Semiconductor 

SUMMARY DESCRIPTION

The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.

 

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