HVL147 数据手册 ( 数据表 ) - Renesas Electronics
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Renesas Electronics
Features
• Adopting the trench structure improves low capacitance. (C = 0.31 pF max)
• Low forward resistance. (rf = 1.5 Ω max)
• Low operation current.
• Extremely small Flat Lead Package (EFP) is suitable for surface mount design.
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Silicon Epitaxial Trench Pin Diode for Antenna Switching
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching ( Rev : 2006 )
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Hitachi -> Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Hitachi -> Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching
Renesas Electronics
Silicon Epitaxial Trench Pin Diode for Antenna Switching ( Rev : 2006 )
Renesas Electronics
