GENERAL DESCRIPTION
The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as
131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which
constantly monitors Vcc for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package HMN12816D devices can be used in place of solutions which build nonvolatile 128Kx16 memory by utilizing a variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

FEATURES
Access time : 70, 85, 120, 150ns
High-density design : 256KByte Design
Battery internally isolated until power is applied
Industry-standard 40-pin 128K x 16 pinout
Unlimited write cycles
Data retention in the absence of VCC
10-years minimum data retention in absence of power
Automatic write-protection during power-up/power-down cycles
Data is automatically protected during power loss
Conventional SRAM operation; unlimited write cycles