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HM6216255HCLJP-10 数据手册 ( 数据表 ) - Hitachi -> Renesas Electronics

HM6216255HC image

零件编号
HM6216255HCLJP-10

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17 Pages

File Size
84.6 kB

生产厂家
Hitachi
Hitachi -> Renesas Electronics 

Description
The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.


FEATUREs
• Single 5.0 Vsupply : 5.0 V ± 10 %
• Access time: 10 ns (max)
• Completely static memory
    - No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
    - All inputs and outputs
• Operating current: 170 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max) : 1.2 mA (max) (L-version)
• Data retansion current: 0.8 mA (max) (L-version)
• Data retantion voltage: 2 V (min) (L-version)
• Center VCC and VSS type pinout

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零件编号
产品描述 (功能)
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生产厂家
4M high Speed SRAM (256-kword × 16-bit)
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Hitachi -> Renesas Electronics
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Renesas Electronics
4M High Speed SRAM (512-kword × 8-bit)
PDF
Hitachi -> Renesas Electronics
4M High Speed SRAM (512-kword × 8-bit)
PDF
Hitachi -> Renesas Electronics
4M High Speed SRAM (512-kword × 8-bit)
PDF
Hitachi -> Renesas Electronics

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