HITK0203MP(2011) 数据手册 ( 数据表 ) - Renesas Electronics
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Renesas Electronics
Silicon N Channel MOS FET Power Switching
FEATUREs
• Low on-resistance
RDS(on) = 68 mΩ typ (VGS = 4.5 V, ID = 1.5 A)
• Low drive current
• High speed switching
• 2.5 V gate drive
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Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
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Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
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Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
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Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
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Silicon N Channel MOS FET Power Switching
Renesas Electronics
Silicon N Channel MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
