HAT2166H-EL-E 数据手册 ( 数据表 ) - Renesas Electronics
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Renesas Electronics
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 2.9 mΩ typ. (at VGS = 10 V)
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Silicon N Channel Power MOS FET Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching ( Rev : 2010_07 )
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching ( Rev : 2005 )
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics