GS816018T 数据手册 ( 数据表 ) - Giga Semiconductor
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Giga Semiconductor
Features
• FT pin for user-configurable flow through or pipeline operation
• Single Cycle Deselect (SCD) operation
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
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1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Unspecified
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs ( Rev : 2004 )
Giga Semiconductor
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor