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GB01SHT06-CAL 数据手册 ( 数据表 ) - GeneSiC Semiconductor, Inc.

GB01SHT06-CAL image

零件编号
GB01SHT06-CAL

Other PDF
  2012  

PDF
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page
5 Pages

File Size
287.6 kB

生产厂家
GENESIC
GeneSiC Semiconductor, Inc. 

Features
• 650 V Schottky rectifier
• 210 °C maximum operating temperature
• Zero reverse recovery charge
• Superior surge current capability
• Positive temperature coefficient of VF
• Temperature independent switching behavior
• Lowest figure of merit QC/IF
• Available screened to Mil-PRF-19500

Advantages
• High temperature operation
• Improved circuit efficiency (Lower overall cost)
• Low switching losses
• Ease of paralleling devices without thermal runaway
• Smaller heat sink requirements
• Industry’s lowest reverse recovery charge
• Industry’s lowest device capacitance
• Ideal for output switching of power supplies
• Best in class reverse leakage current at operating temperature


APPLICATIONs
• Down Hole Oil Drilling
• Geothermal Instrumentation
• Solenoid Actuators
• General Purpose High-Temperature Switching
• Amplifiers
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)


零件编号
产品描述 (功能)
视图
生产厂家
High Temperature Silicon Carbide Power Schottky Diode
PDF
GeneSiC Semiconductor, Inc.
High Temperature Silicon Carbide Power Schottky Diode
PDF
GeneSiC Semiconductor, Inc.
High Temperature Silicon Carbide Power Schottky Diode
PDF
GeneSiC Semiconductor, Inc.
High Temperature Silicon Carbide Power Schottky Diode
PDF
GeneSiC Semiconductor, Inc.
High Temperature Silicon Carbide Power Schottky Diode
PDF
GeneSiC Semiconductor, Inc.
High Temperature Silicon Carbide Power Schottky Diode
PDF
GeneSiC Semiconductor, Inc.
High Temperature Silicon Carbide Power Schottky Diode
PDF
GeneSiC Semiconductor, Inc.
High Temperature Silicon Carbide Power Schottky Diode
PDF
GeneSiC Semiconductor, Inc.
High Temperature Silicon Carbide Power Schottky Diode
PDF
GeneSiC Semiconductor, Inc.
High Temperature Silicon Carbide Power Schottky Diode
PDF
GeneSiC Semiconductor, Inc.

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