Description
The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOS FET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25°C and +150°C.

FEATUREs
• 30A, 1200V
• Latch Free Operation
• Typical Fall Time - 580ns
• High Input Impedance
• Low Conduction Loss