G25N120H3 数据手册 ( 数据表 ) - Infineon Technologies
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Infineon Technologies
High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120
FEATUREs:
TRENCHSTOPTM technology offering
• best in class switching performance: less than 500µJ total switching losses achievable
• very low VCEsat
• low EMI
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• complete product spectrum and PSpice Models: //www.infineon.com/igbt/
APPLICATIONs:
• solar inverters
• uninterruptible power supplies
• welding converters
• converters with high switching frequency
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