FX6ASJ-3-T13 数据手册 ( 数据表 ) - Renesas Electronics
生产厂家
Renesas Electronics
Features
• Drive voltage : 4 V
• VDSS : – 150 V
• rDS(ON) (max) : 0.53 Ω
• ID : – 6 A
• Integrated Fast Recovery Diode (TYP.) : 100 ns
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High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET ( Rev : 2010 )
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET ( Rev : 2004 )
Renesas Electronics
