FX50SMJ-06 数据手册 ( 数据表 ) - Renesas Electronics
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Renesas Electronics
Features
• Drive voltage : 4 V
• VDSS : –60 V
• rDS(ON) (max) : 18.9 mΩ
• ID : –50 A
• Integrated Fast Recovery Diode (TYP.) : 70 ns
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High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET
Renesas Electronics
High-Speed Switching Use Pch Power MOS FET ( Rev : 2004 )
Renesas Electronics
