FR101G 数据手册 ( 数据表 ) - Taiwan Memory Technology
生产厂家

Taiwan Memory Technology
FEATURES
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
1A, 50V - 1000V Glass Passivated Rectifiers
Taiwan Memory Technology
1A, 50V - 1000V Glass Passivated Rectifiers ( Rev : V_O15 )
Shenzhen Luguang Electronic Technology Co., Ltd
1.5A, 50V - 1000V Glass Passivated Fast Recovery Rectifiers
TSC Corporation
1A, 50V - 1000V Glass Passivated High Efficient Rectifiers
TSC Corporation
1A, 50V - 1000V Glass Passivated High Efficient Rectifiers
TSC Corporation
1A, 50V - 1000V Glass Passivated High Efficient Bridge Rectifiers
Taiwan Memory Technology
10A, 50V - 1000V Glass Passivated Rectifiers
Taiwan Memory Technology
1A, 50V - 1000V Silicon Rectifiers ( Rev : V_F15 )
Shenzhen Luguang Electronic Technology Co., Ltd
1A, 50V - 1000V Silicon Rectifiers
Taiwan Memory Technology
20A, 50V - 1000V Glass Passivated Bridge Rectifiers
TSC Corporation