General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FEATUREs
• 60A, 30V. RDS(on)= 0.0135Ω@VGS= 10 V
• Low gate charge ( typical 18.5 nC)
• Low Crss ( typical 155 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating