零件编号
FQD2N100
Other PDF
no available.
PDF
page
9 Pages
File Size
895.7 kB
生产厂家
Fairchild Semiconductor
FQD2N100 数据手册 ( 数据表 ) - Fairchild Semiconductor
Fairchild Semiconductor
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FEATUREs
• 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V, ID = 0.8 A
• Low Gate Charge ( Typ. 12 nC)
• Low Crss ( Typ. 5 pF)
• 100% Avalanche Tested
• RoHS Compliant
零件编号
产品描述 (功能)
视图
生产厂家
TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET
Motorola => Freescale
20 A, 40 V, RDS(ON) 9 mΩ N-Channel Enhancement MOSFET ( Rev : 2010 )
Secos Corporation.
Share Link: 