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FQB19N10 数据手册 ( 数据表 ) - Fairchild Semiconductor

FQB19N10 image

零件编号
FQB19N10

产品描述 (功能)

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9 Pages

File Size
571.3 kB

生产厂家
Fairchild
Fairchild Semiconductor 

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.


FEATUREs
• 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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