DESCRIPTION AND APPLICATIONS
The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation.
Typical applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz range. The device is well-suited for telecommunication applications.

FEATURES
♦ 14 dBm P-1dB at 12 GHz
♦ 9 dB Power Gain at 12 GHz
♦ 3.0 dB Noise Figure at 12 GHz