FJPF9020 数据手册 ( 数据表 ) - Fairchild Semiconductor
生产厂家
Fairchild Semiconductor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High Collector-Base Breakdown Voltage : BVCBO = -550V
• High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.)
• Industrial Use
PNP Epitaxial Darlington Transistor ( Rev : 2001 )
Fairchild Semiconductor
PNP Epitaxial Darlington Transistor
Fairchild Semiconductor
PNP Epitaxial Darlington Transistor
Fairchild Semiconductor
PNP Epitaxial Silicon Darlington Transistor
Semihow
PNP Epitaxial Silicon Darlington Transistor
Fairchild Semiconductor
PNP Epitaxial Silicon Darlington Transistor
Fairchild Semiconductor
PNP Epitaxial Silicon Darlington Transistor
Semihow
PNP Epitaxial Silicon Darlington Transistor
Semihow
PNP Epitaxial Silicon Darlington Transistor ( Rev : 2008 )
Fairchild Semiconductor
PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR
Samsung
