General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V).

FEATUREs
• –4.4 A, –20 V. RDS(ON) = 0.035 Ω @ VGS = –4.5 V RDS(ON) = 0.057 Ω @ VGS = –2.5 V.
• Extended VGSS range (±12V) for battery applications.
• ESD protection diode (note 3).
• High performance trench technology for extremely low RDS(ON) .
• Low profile TSSOP-8 package.

APPLICATIONs
• Load switch
• Motor drive
• DC/DC conversion
• Power management