General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

FEATUREs
• rDS(ON) = 5.1mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 6.4mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
   rDS(ON)
• Low gate charge
• High power and current handling capability

APPLICATIONs
• DC/DC converters