General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

FEATUREs
• 50 A, 20 V RDS(ON) = 9 mW @ VGS = 10 V RDS(ON) = 11 mW @ VGS = 4.5 V RDS(ON) = 16 mW @ VGS = 2.5 V
• Low gate charge (16 nC)
• Fast Switching
• High performance trench technology for extremely low RDS(ON)

APPLICATIONs
• DC/DC converter
• Motor Drives