General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switiching PWM controllers. It has been optimized for low gate charge ,low rDS(on) and fast switching speed.

FEATUREs
■ Max rDS(on) = 21mΩ at VGS = 10V, ID = 8A
■ Max rDS(on) = 25mΩ at VGS = 4.5V, ID = 6.6A
■ Low gate charge
■ RoHS Compliant

APPLICATION
■ DC/DC converters