General Description
These P-Channel MOSFETs are made using FSC’s PowerTrenchÒ technology. They are packaged in a single SO-8 which is designed to allow two MOSFETs to operate independenly, each with it’s own heat sink. The combination of silicon and package technologies results in minimum board space and cost.

FEATUREs
• Q1: P-Channel
    –4.3A, –30V RDS(on) = 55mW @ VGS = –10V RDS(on) = 85mW @ VGS = –4.5V
• Q2: P-Channel
    –6.8A, –12V RDS(on) = 17mW @ VGS = –4.5V RDS(on) = 24mW @ VGS = –2.5V RDS(on) = 30mW @ VGS = –1.8V
• High power and handling capability in a widely used surface mount package