General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FEATUREs
■ 5.5 A, 30 V.
   RDS(ON) = 38 mΩ @ VGS = 10 V
   RDS(ON) = 50 mΩ @ VGS = 4.5 V
■ Fast switching speed
■ Low gate charge
■ High performance trench technology for extremely
   low RDS(ON)
■ High power and current handling capability