General Description
   The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

FEATUREs
• VDS (V) =30V
• ID= 13 A (VGS = 10V)
• RDS(ON) ＜ 6mΩ (VGS=10V)
• RDS(ON) ＜ 7.25mΩ (VGS=4.5V)
• Includes SyncFET Schottky body diode
• Low gate charge (45nC typical)
• High performance trench technology for
   extremely low RDS(ON) and fast switching
• RoHS Compliant
• High power and current handling capability