General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

FEATUREs
• 23 A, 20 V. RDS(ON) = 3.5 mΩ @ VGS = 4.5 V RDS(ON) = 4 mΩ @ VGS = 2.5 V RDS(ON) = 6 mΩ @ VGS = 1.8 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching, low gate charge
• FLMP SO-8 package: Enhanced thermal performance in industry-standard package size

APPLICATIONs
• Synchronous rectifier
• DC/DC converter