FDMA430NZ(2006-01) 数据手册 ( 数据表 ) - Fairchild Semiconductor
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Fairchild Semiconductor
General Description
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
FEATUREs
■ RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A
■ RDS(on) = 50mΩ @ VGS = 2.5 V, ID = 4.5A
■ Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm
■ RoHS Compliant
APPLICATIONs
■ Li-lon Battery Pack
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