FDH3632 数据手册 ( 数据表 ) - Inchange Semiconductor
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Inchange Semiconductor
• FEATURES
• With TO-247 packaging
• Drain Source Voltage-
: VDSS ≥100V
• Static drain-source on-resistance:
RDS(on) ≤ 9mΩ@VGS=10V
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
• APPLICATIONS
• Power supply
• Switching applications
N-channel mosfet transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
New Jersey Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor
N-Channel Mosfet Transistor
Inchange Semiconductor